Silicon carbide devices3/12/2023 ![]() ![]() ![]() At this voltage range, these devices are optimal for the automotive and solar inverter applications (and much more besides), giving the power electronics designer a valuable tool in the development of small, light and efficient solutions. A fast-growing number of companies have realised fast switching, low resistance Schottky diodes and MOSFETs from 600 V up to 1700 V. In this post, I shall explore the issues associated with high voltage (HV) SiC devices and try to answer the question as to why 10 kV devices still appear to be a little way from becoming a commercial reality.Įvidence of silicon carbide’s (SiC) potential as the next big thing in power electronics is before us today. SiC power devices have the potential to reach voltage ratings beyond 30 kV, yet today, SiC chip manufacturers are focussed on SiC MOSFETs and Schottky diodes from 600-1700 V.
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